D10040200PL1 datasheet, hybrid equivalent, RF Micro Devices

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D10040200PL1 Features and benefits

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* +VB Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT
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* INPUT OUTPUT
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D10040200PL1 Application

*   GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Parameter Overall Power Gain Slope [1] Flatness of Frequency Res.

D10040200PL1 Description

The D10040200PL1 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT and GaN HEMT die and is operated from 45MHz to 1000MHz. It provides high output capability, excellent linearity, and superior return loss performance with low no.

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